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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6P35AFU,LF | 0.4300 |  |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6P35 | MOSFET (Metal Oxide) | 285mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||
 |
TK8R2A06PL,S4X | 1.0200 | |
1381 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8R2A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 50A (Tc) | 4.5V, 10V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4 nC @ 10 V | ±20V | 1990 pF @ 25 V | - | 36W (Tc) | ||||||||||||||||||||
 |
TK4P55DA(T6RSS-Q) | - | |
2865 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4P55 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | TK4P55DAT6RSSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 550 V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 80W (Tc) | |||||||||||||||||||
 |
RN1423TE85LF | 0.4200 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1423 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 1mA, 50mA | 70 @ 100mA, 1V | 300 MHz | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||
|
RN2418,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2418 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 47 kOhms | 10 kOhms | ||||||||||||||||||||||||
 |
2SK2009TE85LF | 0.5600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK2009 | MOSFET (Metal Oxide) | SC-59-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 200mA (Ta) | 2.5V | 2Ohm @ 50MA, 2.5V | 1.5V @ 100µA | ±20V | 70 pF @ 3 V | - | 200mW (Ta) | |||||||||||||||||||||
 |
SSM6N39TU,LF | 0.4900 | |
7160 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N39 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 1.6A (Ta) | 119mOhm @ 1A, 4V | 1V @ 1mA | 7.5nC @ 4V | 260pF @ 10V | - | ||||||||||||||||||||||
 |
SSM6P69NU,LF | 0.4300 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6P69 | MOSFET (Metal Oxide) | 1W (Ta) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 4A (Ta) | 45mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||
 |
TK18A30D,S5X | 1.7900 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 300 V | 18A (Ta) | 10V | 139mOhm @ 9A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2600 pF @ 100 V | - | 45W (Tc) | |||||||||||||||||||||
|
T2N7002AK,LM | 0.1500 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | T2N7002 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 200mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 320mW (Ta) | ||||||||||||||||||||
 |
RN1909FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1909 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||
|
TJ80S04M3L(T6L1,NQ | 1.2600 | |
5815 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ80S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | ||||||||||||||||||||
 |
GT10G131(TE12L,Q) | - | |
4336 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | GT10G131 | Standard | 1 W | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | - | - | 400 V | 200 A | 2.3V @ 4V, 200A | - | 3.1µs/2µs | ||||||||||||||||||||||||
|
TK650A60F,S4X | 1.3400 | |
48 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK650A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34 nC @ 10 V | ±30V | 1320 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||||
 |
TK8A45DA(STA4,Q,M) | 1.6400 | |
6704 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | - | Through Hole | TO-220-3 Full Pack | TK8A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 7.5A (Tc) | - | - | - | - | ||||||||||||||||||||||||
 |
SSM3J35AFS,LF | 0.2600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | SSM3J35 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | ±10V | 42 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||
 |
TK31J60W,S1VQ | 9.3800 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK31J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||
 |
2SJ438,Q(M | - | |
8401 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-220-3 Full Pack | 2SJ438 | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 5A (Tj) | |||||||||||||||||||||||||||||||||
 |
TPCC8067-H,LQ(S | - | |
6291 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCC8067 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 9A (Ta) | 4.5V, 10V | 25mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5 nC @ 10 V | ±20V | 690 pF @ 10 V | - | 700mW (Ta), 15W (Tc) | ||||||||||||||||||||
 |
RN2130MFV,L3F | 0.2000 | |
1257 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2130 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 100 @ 10mA, 5V | 100 kOhms | 100 kOhms | ||||||||||||||||||||||||
 |
RN1313,LXHF | 0.3900 | |
8975 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1313 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 47 kOhms | |||||||||||||||||||||||||
|
SSM3K44FS,LF | 0.2800 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | SSM3K44 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 8.5 pF @ 3 V | - | 150mW (Ta) | |||||||||||||||||||||
|
2SK3462(TE16L1,NQ) | - | |
7650 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3462 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 3A (Ta) | 10V | 1.7Ohm @ 1.5A, 10V | 3.5V @ 1mA | 12 nC @ 10 V | ±20V | 267 pF @ 10 V | - | 20W (Tc) | |||||||||||||||||||||
|
RN1904FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1904 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||
|
TK12A50E,S5X | - | |
5246 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK12A50 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1.2mA | 40 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||||
|
TPC8035-H(TE12L,QM | - | |
2642 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8035 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 18A (Ta) | 4.5V, 10V | 3.2mOhm @ 9A, 10V | 2.3V @ 1mA | 82 nC @ 10 V | ±20V | 7800 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||
|
TK39J60W5,S1VQ | 12.2700 | |
3287 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK39J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | ||||||||||||||||||||
|
RN1101MFV,L3XHF(CT | 0.3400 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1101 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 30 @ 10mA, 5V | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||
 |
TK380P60Y,RQ | 1.6900 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK380P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||
|
TK4P50D(T6RSS-Q) | - | |
2672 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4P50 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | TK4P50DT6RSSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 80W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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