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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current Rating (Amps) | Current - Max | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Resistance @ If, F | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
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RN4982,LF(CT | 0.3700 | ![]() |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4982 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100µA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz, 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||||||||||||||||
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TPN2R805PL,L1Q | 0.9800 | ![]() |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN2R805 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 45 V | 139A (Ta), 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 40A, 10V | 2.4V @ 300µA | 39 nC @ 10 V | ±20V | 3200 pF @ 22.5 V | - | 2.67W (Ta), 104W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK13A65U(STA4,Q,M) | - | ![]() |
1833 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A65 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 650 V | 13A (Ta) | 10V | 380mOhm @ 6.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 40W (Tc) | ||||||||||||||||||||||||||||||||||||||
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2SC2229-Y(T6MITIFM | - | ![]() |
7080 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | 2SC2229YT6MITIFM | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||||||||||
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RN2111,LF(CT | 0.2000 | ![]() |
6434 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2111 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 10 kOhms | ||||||||||||||||||||||||||||||||||||||||||
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CUS01(TE85L,Q,M) | - | ![]() |
8070 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS01 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 390 mV @ 1 A | 1.5 mA @ 30 V | -40°C ~ 125°C | 1A | - | |||||||||||||||||||||||||||||||||||||||||||
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1SV270TPH3F | 0.4200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-76, SOD-323 | 1SV270 | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | 8.7pF @ 4V, 1MHz | Single | 10 V | 2 | C1/C4 | - | ||||||||||||||||||||||||||||||||||||||||||||
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2SK2854(TE12L,F) | - | ![]() |
5398 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 10 V | TO-243AA | 2SK2854 | 849MHz | MOSFET | PW-MINI | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500mA | 23dBmW | - | - | ||||||||||||||||||||||||||||||||||||||||||||
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TPN7R506NH,L1Q | 1.0200 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN7R506 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 26A (Tc) | 6.5V, 10V | 7.5mOhm @ 13A, 10V | 4V @ 200µA | 22 nC @ 10 V | ±20V | 1800 pF @ 30 V | - | 700mW (Ta), 42W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK55S10N1,LQ | 2.9700 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK55S10 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3280 pF @ 10 V | - | 157W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK65G10N1,RQ | - | ![]() |
7711 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK65G10 | MOSFET (Metal Oxide) | D2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 65A (Ta) | 10V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 156W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK90S06N1L,LQ | 2.2100 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK90S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 90A (Ta) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2.5V @ 500µA | 81 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 157W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TPWR8503NL,L1Q | 2.7600 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPWR8503 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TJ50S06M3L(T6L1,NQ | 1.9400 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ50S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124 nC @ 10 V | +10V, -20V | 6290 pF @ 10 V | - | 90W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TJ8S06M3L(T6L1,NQ) | 1.2600 | ![]() |
9068 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ8S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 890 pF @ 10 V | - | 27W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK4P60DA(T6RSS-Q) | - | ![]() |
2953 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4P60 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | TK4P60DAT6RSSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 80W (Tc) | |||||||||||||||||||||||||||||||||||||
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TPCC8066-H,LQ(S | - | ![]() |
6818 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCC8066 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 11A (Ta) | 4.5V, 10V | 15mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 700mW (Ta), 17W (Tc) | ||||||||||||||||||||||||||||||||||||||
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RN1104,LF(CT | 0.2000 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1104 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||||||||||
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TK6Q60W,S1VQ | 1.9900 | ![]() |
8673 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK6Q60 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||||||||||||||||||
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SSM6L11TU(TE85L,F) | - | ![]() |
8093 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6L11 | MOSFET (Metal Oxide) | 500mW | UF6 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 20V | 500mA | 145mOhm @ 250MA, 4V | 1.1V @ 100µA | - | 268pF @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
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2SK209-GR(TE85L,F) | 0.4700 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK209 | 150 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 14 mA @ 10 V | 1.5 V @ 100 nA | 14 mA | |||||||||||||||||||||||||||||||||||||||||||
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JDP2S08SC(TPL3) | 0.4800 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | 0201 (0603 Metric) | JDP2S08 | SC2 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | 50 mA | 0.4pF @ 1V, 1MHz | PIN - Single | 30V | 1.5Ohm @ 10mA, 100MHz | ||||||||||||||||||||||||||||||||||||||||||||||
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JDV2S41FS(TPL3) | - | ![]() |
5763 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | 2-SMD, Flat Lead | JDV2S41 | fSC | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | 16pF @ 2V, 1MHz | Single | 15 V | - | - | |||||||||||||||||||||||||||||||||||||||||||||
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TK39A60W,S4VX | 9.7500 | ![]() |
100 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK39A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | ||||||||||||||||||||||||||||||||||||||
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2SK2145-Y(TE85L,F) | 0.6800 | ![]() |
26 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SK2145 | 300 mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 13pF @ 10V | 1.2 mA @ 10 V | 200 mV @ 100 nA | |||||||||||||||||||||||||||||||||||||||||||||
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2SK879-GR(TE85L,F) | 0.4200 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK879 | 100 mW | USM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 2.6 mA @ 10 V | 400 mV @ 100 nA | |||||||||||||||||||||||||||||||||||||||||||||
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SSM6N35AFE,LF | 0.4000 | ![]() |
43 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6N35 | MOSFET (Metal Oxide) | 250mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||
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1SV308,L3F | 0.4300 | ![]() |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | SC-79, SOD-523 | 1SV308 | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | 50 mA | 0.5pF @ 1V, 1MHz | PIN - Single | 30V | 1.5Ohm @ 10mA, 100MHz | ||||||||||||||||||||||||||||||||||||||||||||||
CMF03(TE12L,Q,M) | 0.5300 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMF03 | Standard | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 900 V | 2.5 V @ 500 mA | 100 ns | 50 µA @ 900 V | -40°C ~ 125°C | 500mA | - | |||||||||||||||||||||||||||||||||||||||||||
CMH05(TE12L,Q,M) | - | ![]() |
7589 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMH05 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | CMH05(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.3 V @ 1 A | 100 ns | 10 µA @ 400 V | -40°C ~ 150°C | 1A | - |
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