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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SJ438(CANO,Q,M) | - |  |
8364 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-220-3 Full Pack | 2SJ438 | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 5A (Tj) | ||||||||||||||||||||||||||||||||||
 |
TPH12008NH,L1Q | 1.2500 | |
9998 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH12008 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 24A (Tc) | 10V | 12.3mOhm @ 12A, 10V | 4V @ 300µA | 22 nC @ 10 V | ±20V | 1900 pF @ 40 V | - | 1.6W (Ta), 48W (Tc) | |||||||||||||||||||||
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RN2112ACT(TPL3) | 0.0527 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN2112 | 100 mW | CST3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 100nA (ICBO) | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 120 @ 1mA, 5V | 22 kOhms | ||||||||||||||||||||||||||
 |
TK14G65W5,RQ | 1.5362 | |
7882 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK14G65 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||
 |
TPC8113(TE12L,Q) | - | |
9646 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8113 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 11A (Ta) | 4V, 10V | 10mOhm @ 5.5A, 10V | 2V @ 1mA | 107 nC @ 10 V | ±20V | 4500 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
 |
TK50P03M1(T6RSS-Q) | - | |
8706 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK50P03 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 50A (Ta) | 4.5V, 10V | 7.5mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3 nC @ 10 V | ±20V | 1700 pF @ 10 V | - | 47W (Tc) | |||||||||||||||||||||
 |
TK4A55DA(STA4,Q,M) | - | |
7445 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A55 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | |||||||||||||||||||||
 |
RN4989(T5L,F,T) | 0.3000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4989 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100µA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||
 |
TPW1R306PL,L1Q | 3.0600 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | TPW1R306 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 260A (Tc) | 4.5V, 10V | 1.29mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||||
 |
2SA965-O(TE6,F,M) | - | |
2634 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA965 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||
 |
RN2106MFV,L3F(CT | 0.1800 | |
33 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2106 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 47 kOhms | |||||||||||||||||||||||||
|
RN1104MFV,L3F(CT | 0.1800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1104 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||
 |
TK110U65Z,RQ | 4.5300 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | TOLL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | ||||||||||||||||||||||
|
2SK3313(Q) | - | |
1994 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3313 | MOSFET (Metal Oxide) | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 12A (Ta) | 10V | 620mOhm @ 6A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2040 pF @ 10 V | - | 40W (Tc) | ||||||||||||||||||||||
 |
TPCA8103(TE12L,Q,M | - | |
6622 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8103 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 40A (Ta) | 4V, 10V | 4.2mOhm @ 20A, 10V | 2V @ 1mA | 184 nC @ 10 V | ±20V | 7880 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||||||||||
 |
1SS397TE85LF | 0.4100 | |
8305 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS397 | Standard | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 400 V | 1.3 V @ 100 mA | 500 ns | 1 µA @ 400 V | 125°C (Max) | 100mA | 5pF @ 0V, 1MHz | |||||||||||||||||||||||||
|
2SA2061(TE85L,F) | 0.5000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 625 mW | TSM | download | ROHS3 Compliant | 1 (Unlimited) | 264-2SA2061(TE85L,F)DKR | EAR99 | 8541.21.0095 | 3,000 | 20 V | 2.5 A | 100nA (ICBO) | PNP | 190mV @ 53mA, 1.6A | 200 @ 500mA, 2V | - | |||||||||||||||||||||||||
|
RN2105MFV,L3F | - | |
8823 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2105 | 150 mW | VESM | download | RoHS Compliant | 1 (Unlimited) | RN2105MFVL3F | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||
|
2SC1627A-O,PASF(M | - | |
7005 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC1627 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 80 V | 400 mA | 100nA (ICBO) | NPN | 400mV @ 20mA, 200A | 70 @ 50mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
RN4985FE,LF(CT | 0.2400 | |
259 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4985 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||
 |
SSM3K72KFS,LF | 0.2100 | |
162 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | SSM3K72 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 300mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||
|
2SA1020-Y(ND1,AF) | - | |
4519 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
RN1606(TE85L,F) | 0.4200 | |
390 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1606 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||
|
RN4903,LXHF(CT | 0.4400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4903 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz, 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||
|
2SA1020-Y(6MBH1,AF | - | |
3365 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
RN1408,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1408 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 22 kOhms | 47 kOhms | |||||||||||||||||||||||||
|
RN4902,LXHF(CT | 0.4400 | |
1969 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4902 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz, 250MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||
 |
SSM3K361TU,LF | 0.4700 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 3-SMD, Flat Lead | SSM3K361 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1W (Ta) | |||||||||||||||||||||
 |
SSM3J352F,LF | 0.4900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J352 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.8V, 10V | 110mOhm @ 2A, 10V | 1.2V @ 1mA | 5.1 nC @ 4.5 V | ±12V | 210 pF @ 10 V | - | 1.2W (Ta) | |||||||||||||||||||||
 |
SSM6N68NU,LF | 0.4600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6N68 | MOSFET (Metal Oxide) | 2W (Ta) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A (Ta) | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | Logic Level Gate, 1.8V Drive |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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