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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1SV285TPH3F | 0.0834 |  |
9414 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV285 | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 4,000 | 2.35pF @ 4V, 1MHz | Single | 10 V | 2.3 | C1/C4 | - | |||||||||||||||||||||||||||||||||||||||
 |
1SV310TPH3F | 0.4200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-76, SOD-323 | 1SV310 | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | 5.45pF @ 4V, 1MHz | Single | 10 V | 2.1 | C1/C4 | - | |||||||||||||||||||||||||||||||||||||||
|
1SV281(TPH3,F) | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV281 | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 4,000 | 8.7pF @ 4V, 1MHz | Single | 10 V | 2 | C1/C4 | - | |||||||||||||||||||||||||||||||||||||||
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SSM3K106TU(TE85L) | - | |
1623 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3K106 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 1.2A (Ta) | 4V, 10V | 310mOhm @ 600mA, 10V | 2.3V @ 100µA | ±20V | 36 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||||||
 |
SSM3J321T(TE85L,F) | - | |
4337 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J321 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 5.2A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1 nC @ 4.5 V | ±8V | 640 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||||||||||||||
 |
SSM3K7002BSU,LF | - | |
7505 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Discontinued at SIC | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K7002 | MOSFET (Metal Oxide) | USM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | ±20V | 17 pF @ 25 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||||||
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TPC6006-H(TE85L,F) | - | |
4684 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6006 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 40 V | 3.9A (Ta) | 4.5V, 10V | 75mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4 nC @ 10 V | ±20V | 251 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||||||||||||||
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SSM6N42FE(TE85L,F) | - | |
4807 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6N42 | MOSFET (Metal Oxide) | 150mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 800mA | 240mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 90pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
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SSM6N37CTD(TPL3) | - | |
2918 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6N37 | MOSFET (Metal Oxide) | 140mW | CST6D | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 2 N-Channel (Dual) | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
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TPC8211(TE12L,Q,M) | - | |
1656 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8211 | MOSFET (Metal Oxide) | 450mW | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 5.5A | 36mOhm @ 3A, 10V | 2.5V @ 1mA | 25nC @ 10V | 1250pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
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TK58E06N1,S1X | 1.4600 | |
7818 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK58E06 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 58A (Ta) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 110W (Tc) | |||||||||||||||||||||||||||||||||
 |
TK15A60D(STA4,Q,M) | - | |
5345 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK15A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||||||||||
 |
RN2105MFV,L3F(CT | 0.1800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2105 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||||||
 |
RN1113,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1113 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 47 kOhms | ||||||||||||||||||||||||||||||||||||||
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TW015N65C,S1F | 55.4500 | |
114 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | ||||||||||||||||||||||||||||||||||
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TTD1409B,S4X | 1.6000 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TTD1409 | 2 W | TO-220SIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 400 V | 6 A | 20µA (ICBO) | NPN - Darlington | 2V @ 40mA, 4A | 600 @ 2A, 2V | - | ||||||||||||||||||||||||||||||||||||||
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TK2R9E10PL,S1X | 2.9000 | |
9020 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Ta) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2.5V @ 1mA | 161 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 306W (Tc) | ||||||||||||||||||||||||||||||||||
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TK5A90E,S4X | 1.4600 | |
9249 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 4.5A (Ta) | 10V | 3.1Ohm @ 2.3A, 10V | 4V @ 450µA | 20 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 40W (Tc) | ||||||||||||||||||||||||||||||||||
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TPW3R70APL,L1Q | 2.9000 | |
5726 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 45A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||||||||||||||||||
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TPH5R60APL,L1Q | 1.3600 | |
3472 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 60A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.5V @ 500µA | 52 nC @ 10 V | ±20V | 4300 pF @ 50 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||||||||||||||||||||||||
|
SSM3J118TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | 2.6V @ 1mA | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||||||
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GT15J341,S4X | 1.8100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | Standard | 30 W | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 300V, 15A, 33Ohm, 15V | 80 ns | - | 600 V | 15 A | 60 A | 2V @ 15V, 15A | 300µJ (on), 300µJ (off) | 60ns/170ns | |||||||||||||||||||||||||||||||||||
 |
SSM6N813R,LF | 0.5500 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6N813 | MOSFET (Metal Oxide) | 1.5W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 3.5A (Ta) | 112mOhm @ 3.5A, 10V | 2.5V @ 100µA | 3.6nC @ 4.5V | 242pF @ 15V | - | |||||||||||||||||||||||||||||||||||
|
TK13P25D,RQ | 0.9000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | ||||||||||||||||||||||||||||||||||
|
TDTA123J,LM | 0.1800 | |
7429 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA123 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | |||||||||||||||||||||||||||||||||||||
 |
GT40QR21(STA1,E,D | 3.6200 | |
18 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT40QR21 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT40QR21(STA1ED | EAR99 | 8541.29.0095 | 25 | 280V, 40A, 10Ohm, 20V | 600 ns | - | 1200 V | 40 A | 80 A | 2.7V @ 15V, 40A | -, 290µJ (off) | - | |||||||||||||||||||||||||||||||||
|
TPW1500CNH,L1Q | 2.6600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 800mW (Ta), 142W (Tc) | |||||||||||||||||||||||||||||||||||
|
SSM6L820R,LF | 0.5300 | |
2581 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L820 | MOSFET (Metal Oxide) | 1.4W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N and P-Channel | 30V, 20V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V | 1V @ 1mA, 1.2V @ 1mA | 3.2nC @ 4.5V, 6.7nC @ 4.5V | 310pF @ 15V, 480pF @ 10V | - | |||||||||||||||||||||||||||||||||||
|
TK10P50W,RQ | 1.7600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | ||||||||||||||||||||||||||||||||||
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CUHS15S60,H3F | 0.4900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 670 mV @ 1.5 A | 450 µA @ 60 V | 150°C | 1.5A | 130pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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