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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max |
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TJ15P04M3,RQ(S | 0.8700 | ![]() |
878 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ15P04 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 15A (Ta) | 4.5V, 10V | 36mOhm @ 7.5A, 10V | 2V @ 100µA | 26 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 29W (Tc) | ||||||||||||||||||||||||
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TK560A60Y,S4X | 1.5300 | ![]() |
1059 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK560A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W | ||||||||||||||||||||||||
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1SS187,LF | 0.2200 | ![]() |
4171 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS187 | Standard | S-Mini | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 4pF @ 0V, 1MHz | ||||||||||||||||||||||||||||
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RN1113CT(TPL3) | - | ![]() |
5999 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1113 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 100nA (ICBO) | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 300 @ 1mA, 5V | 47 kOhms | ||||||||||||||||||||||||||||||
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TRS10E65F,S1Q | 4.5900 | ![]() |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | TRS10E65 | SiC (Silicon Carbide) Schottky | TO-220-2L | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 10 A | 0 ns | 50 µA @ 650 V | 175°C (Max) | 10A | 36pF @ 650V, 1MHz | ||||||||||||||||||||||||||||
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CLH05(T6L,NKOD,Q) | - | ![]() |
1913 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLH05 | Standard | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 980 mV @ 5 A | 35 ns | 10 µA @ 200 V | -40°C ~ 150°C | 5A | - | |||||||||||||||||||||||||||||
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CCS15S30,L3IDTF | - | ![]() |
4741 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Discontinued at SIC | Surface Mount | 2-SMD, No Lead | CCS15 | Schottky | CST2C | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | 400 mV @ 1 A | 500 µA @ 30 V | 125°C (Max) | 1.5A | 200pF @ 0V, 1MHz | |||||||||||||||||||||||||||||
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RN4904FE,LF(CT | 0.2600 | ![]() |
1676 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4904 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 47kOhms | |||||||||||||||||||||||||||
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TK16A60W,S4VX | 2.9700 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | ||||||||||||||||||||||||
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TK5Q60W,S1VQ | 1.8600 | ![]() |
2135 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK5Q60 | MOSFET (Metal Oxide) | I-Pak | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||||
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TPH4R008NH,L1Q | 2.7900 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH4R008 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 60A (Tc) | 10V | 4mOhm @ 30A, 10V | 4V @ 1mA | 59 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 1.6W (Ta), 78W (Tc) | ||||||||||||||||||||||||
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TK16G60W,RVQ | 6.0900 | ![]() |
6936 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK16G60 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | ||||||||||||||||||||||||
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2SK208-GR(TE85L,F) | 0.4900 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK208 | 100 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 50 V | 2.6 mA @ 10 V | 400 mV @ 100 nA | 6.5 mA | |||||||||||||||||||||||||||||
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2SK208-O(TE85L,F) | 0.4900 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK208 | 100 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 50 V | 600 µA @ 10 V | 400 mV @ 100 nA | 6.5 mA | |||||||||||||||||||||||||||||
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2SK209-BL(TE85L,F) | 0.4400 | ![]() |
1670 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK209 | 150 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 14 mA @ 10 V | 1.5 V @ 100 nA | 14 mA | |||||||||||||||||||||||||||||
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2SK209-Y(TE85L,F) | 0.4700 | ![]() |
19 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK209 | 150 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 14 mA @ 10 V | 1.5 V @ 100 nA | 14 mA | |||||||||||||||||||||||||||||
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SSM3K302T(TE85L,F) | - | ![]() |
9175 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K302 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 3A (Ta) | 1.8V, 4V | 71mOhm @ 2A, 4V | - | 4.3 nC @ 4 V | ±12V | 270 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||||||||
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2SK2034TE85LF | - | ![]() |
5859 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK2034 | MOSFET (Metal Oxide) | SC-70 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | 10V | 8.5 pF @ 3 V | - | 100mW (Ta) | ||||||||||||||||||||||||||
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2SK880GRTE85LF | 0.5900 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK880 | 100 mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 2.6 mA @ 10 V | 1.5 V @ 100 nA | ||||||||||||||||||||||||||||||
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SSM6L09FUTE85LF | 0.4900 | ![]() |
17 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6L09 | MOSFET (Metal Oxide) | 300mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V | 400mA, 200mA | 700mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | Logic Level Gate | ||||||||||||||||||||||||||
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TK7Q60W,S1VQ | 2.1200 | ![]() |
4963 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK7Q60 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||||
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RN1910,LF(CT | 0.2700 | ![]() |
8287 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1910 | 100mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | |||||||||||||||||||||||||||
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RN1111,LF(CT | 0.0355 | ![]() |
4214 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1111 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 10 kOhms | ||||||||||||||||||||||||||||
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2SK208-R(TE85L,F) | 0.4900 | ![]() |
36 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK208 | 100 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 50 V | 300 µA @ 10 V | 400 mV @ 100 nA | 6.5 mA | |||||||||||||||||||||||||||||
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2SK2145-GR(TE85L,F | 0.6800 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SK2145 | 300 mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 13pF @ 10V | 2.6 mA @ 10 V | 200 mV @ 100 nA | |||||||||||||||||||||||||||||||
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TK11A65W,S5X | 1.5300 | ![]() |
101 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK11A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 11.1A (Ta) | 10V | 390mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | ||||||||||||||||||||||||
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TK22A10N1,S4X | 1.4100 | ![]() |
4640 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK22A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 30W (Tc) | ||||||||||||||||||||||||
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TK65A10N1,S4X | 2.7900 | ![]() |
41 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK65A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 45W (Tc) | ||||||||||||||||||||||||
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TK15S04N1L,LQ | 1.6400 | ![]() |
4104 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK15S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | ||||||||||||||||||||||||
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TPN11006NL,LQ | 0.9400 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN11006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 700mW (Ta), 30W (Tc) |
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