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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN2311,LF | 0.1800 |  |
7033 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2311 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 10 kOhms | ||||||||||||||||||||||||||||
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2SA1362-GR,LF | 0.4000 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1362 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 15 V | 800 mA | 100nA (ICBO) | PNP | 200mV @ 8mA, 400mA | 200 @ 100mA, 1V | 120MHz | |||||||||||||||||||||||||||
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2SK3670,F(J | - | |
2775 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | ||||||||||||||||||||||||||||||||||||
 |
TTA004B,Q | 0.4500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TTA004 | 10 W | TO-126N | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 250 | 160 V | 1.5 A | 100nA (ICBO) | PNP | 500mV @ 50mA, 500mA | 140 @ 100mA, 5V | 100MHz | |||||||||||||||||||||||||||
 |
TPW4R50ANH,L1Q | 2.7900 | |
3418 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPW4R50 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 92A (Tc) | 10V | 4.5mOhm @ 46A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 800mW (Ta), 142W (Tc) | |||||||||||||||||||||||
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SSM3J108TU(TE85L) | - | |
2405 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J108 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 1.8A (Ta) | 1.8V, 4V | 158mOhm @ 800mA, 4V | 1V @ 1mA | ±8V | 250 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||
 |
HN1A01FE-GR,LXHF | 0.4500 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | HN1A01 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 150mA | 100nA (ICBO) | 2 PNP (Dual) | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||
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RN2911(T5L,F,T) | - | |
5354 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2911 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | |||||||||||||||||||||||||||
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TRS20N65FB,S1Q | 6.4400 | |
9973 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS20N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | 1 (Unlimited) | 264-TRS20N65FBS1Q | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 10A (DC) | 1.6 V @ 10 A | 0 ns | 50 µA @ 650 V | 175°C | |||||||||||||||||||||||||||
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TK040N65Z,S1F | 11.2700 | |
300 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK040N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | |||||||||||||||||||||||
|
2SA1954-A(TE85L,F) | - | |
8074 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1954 | 100 mW | SC-70 | - | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 200mA | 300 @ 10mA, 2V | 130MHz | ||||||||||||||||||||||||||||
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CLS03(TE16L,DNSO,Q | - | |
9888 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS03 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 10 A | 1 mA @ 60 V | -40°C ~ 125°C | 10A | 345pF @ 10V, 1MHz | |||||||||||||||||||||||||||||
 |
CUS05S40,H3F | 0.3200 | |
105 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS05S40 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 350 mV @ 100 mA | 30 µA @ 10 V | 125°C (Max) | 500mA | 42pF @ 0V, 1MHz | ||||||||||||||||||||||||||||
 |
SSM6N58NU,LF | 0.4600 | |
139 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6N58 | MOSFET (Metal Oxide) | 1W | 6-UDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||
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HN4D02JU(TE85L,F) | 0.0721 | |
5848 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | HN4D02 | Standard | USV | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 1.6 ns | 500 nA @ 80 V | 150°C (Max) | |||||||||||||||||||||||||||
 |
2SA1931,KEHINQ(M | - | |
8804 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | ||||||||||||||||||||||||||||
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2SC2655-Y(TE6,F,M) | - | |
1528 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||
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TPC6011(TE85L,F,M) | - | |
5591 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6011 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 6A (Ta) | 4.5V, 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 14 nC @ 10 V | ±20V | 640 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||||||
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RN2402,LF | 0.2200 | |
6149 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2402 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||
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CUS521,H3F | 0.2000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS521 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 200 mA | 30 µA @ 30 V | 125°C (Max) | 200mA | 26pF @ 0V, 1MHz | ||||||||||||||||||||||||||||
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RN2409,LF | 0.1900 | |
9037 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2409 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||
 |
RN2707JE(TE85L,F) | 0.4800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN2707 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 10kOhms | 47kOhms | ||||||||||||||||||||||||||
|
2SD2206(TE6,F,M) | - | |
7464 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2206 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 100 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | ||||||||||||||||||||||||||||
|
RN1911(T5L,F,T) | - | |
2298 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1911 | 100mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | ||||||||||||||||||||||||||
 |
TK4A60DA(STA4,Q,M) | - | |
8479 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | - | |||||||||||||||||||||||
|
RN2905,LF(CT | 0.2600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2905 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||
|
2SB1457(T6DW,F,M) | - | |
5222 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SB1457 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 100 V | 2 A | 10µA (ICBO) | PNP | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 50MHz | ||||||||||||||||||||||||||||
|
TMBT3906,LM | 0.1800 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TMBT3906 | 320 mW | SOT-23-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 400mV @ 5mA, 50mA | 100 @ 10mA, 1V | 250MHz | |||||||||||||||||||||||||||
|
TK6A50D(STA4,Q,M) | 1.3700 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 6A (Ta) | 10V | 1.4Ohm @ 3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||||
|
HN1D02FU,LF | 0.4400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1D02 | Standard | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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